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APTM10TDUM09P
Triple dual common source
VDSS = 100V RDSon = 9m max @ Tj = 25C ID = 139A @ Tc = 25C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
S5/S6
MOSFET Power Module
D1 D3 D5
G1
G3
G5
S1 S1/S2
S3 S3/S4
S5
S2 G2
S4 G4
S6 G6
D2
D4
D6
Features * Power MOS V(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Max ratings 100 139 100 430 30 9 390 100 50 3000 Unit V A
September, 2004 1-6 APTM10TDUM09P - Rev 0
D1
D3
D5
G1 S1/S2 S1 S2 G2 S3/S4
G3 S3 S4 G4 S5/S6
G5 S5 S6 G6
D2
D4
D6
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTM10TDUM09P
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A Min 100
VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V
Typ
Max 250 1000 9 4 100
Unit V A m V nA
Tj = 25C Tj = 125C 2
VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID =139A Inductive switching @ 125C VGS = 15V VBus = 66V ID = 139A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 139A, R G = 5
Min
Typ 9875 3940 1470 350 60 180 35 70 95 125 552 604 608 641
Max
Unit pF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 139A IS = - 139A VR = 66V diS/dt = 100A/s Tj = 25C Tj = 25C 270 2.9
Max 139 100 1.3 5
Unit A V V/ns ns
September, 2004 2-6 APTM10TDUM09P - Rev 0
C
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 139A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
APTM10TDUM09P
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case IGBT 2500 -40 -40 -40 3
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
Typ
Max 0.32 150 125 100 5 250
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M6
Package outline
5 places (3:1)
APT website - http://www.advancedpower.com
3-6
APTM10TDUM09P - Rev 0
September, 2004
APTM10TDUM09P
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120 ID, Drain Current (A)
VGS=15V, 10V & 9V 8V
400 350 ID, Drain Current (A) 300 250 200 150 100 50 0
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
100 80 60 40 20 0
7V 6V
T J=25C T J=125C T J=-55C
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 69.5A
1 2 3 4 5 6 VGS , Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 160 140 120 100 80 60 40 20 0
September, 2004 4-6 APTM10TDUM09P - Rev 0
1.1
V GS=10V
1 0.9 0.8 0 40 80 120 160 200 240 ID, Drain Current (A)
VGS=20V
25
50
75
100
125
150
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
APTM10TDUM09P
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000
limited by RDSon
VGS=10V ID= 139A
100s
100
1ms
10 Single pulse TJ=150C 1 1
10ms
10 100 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500
September, 2004 5-6 APTM10TDUM09P - Rev 0
VDS=50V V DS =80V ID=139A T J=25C VDS=20V
10000
Ciss Coss Crss
1000
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website - http://www.advancedpower.com
APTM10TDUM09P
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 I D, Drain Current (A) Switching Energy vs Current 1.5 Switching Energy (mJ)
VDS=66V RG=5 TJ=125C L=100H VDS=66V RG=5 T J=125C L=100H
Rise and Fall times vs Current 160 140 t r and tf (ns) 120 100 80 60 40 20 0 250 0 50 100 150 200 ID, Drain Current (A) 250
V DS=66V R G=5 T J=125C L=100H
t d(off)
tf
tr
td(on)
Switching Energy vs Gate Resistance 2.5
VDS=66V ID=139A T J=125C L=100H
Eon and Eoff (mJ)
Eoff
2 1.5 1 0.5 0
Eoff
1
Eon 0.5
Eon
0 0 50 100 150 200 250 I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=66V D=50% RG=5 T J=125C T C=75C ZVS Hard switching ZCS
0
10
20
30
40
50
60
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000
300 250 Frequency (kHz) 200 150 100 50 0 25 50 75 100 125 150 I D, Drain Current (A)
100
TJ=150C
TJ=25C
10
1 VSD, Source to Drain Voltage (V)
September, 2004 6-6 APTM10TDUM09P - Rev 0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com

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